Capacitive coupled non-zero I-V and type-II memristive properties of the NiFe2O4-TiO2 nanocomposite

被引：27
作者：
Ahir, Namita A. [1 ]
Takaloo, Ashkan Vakilipour [2 ]
Nirmal, Kiran A. [1 ]
Kundale, Somnath S. [1 ]
Chougale, Mahesh Y. [3 ]
Bae, Jinho [3 ]
Kim, Deok-kee [4 ]
Dongale, Tukaram D. [1 ]
机构：
[1] Shivaji Univ, Sch Nanosci & Biotechnol, Computat Elect & Nanosci Res Lab, Kolhapur 416004, Maharashtra, India
[2] Ulsan Natl Inst Sci & Technol, Sch Energy & Chem Engn, Ulsan 44919, South Korea
[3] Jeju Natl Univ, Dept Ocean Syst Engn, 102 Jejudaehakro, Jeju 63243, South Korea
[4] Sejong Univ, Dept Elect Engn, 209 Neungdong Ro, Seoul 05006, South Korea
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 125卷 / 125期
基金：
新加坡国家研究基金会;
关键词：
Capacitive coupling; Type-II memristive effect; Non-zero hysteresis; Nanocomposite; Resistive switching; MEMORY; MECHANISM; DEVICE;
D O I：
10.1016/j.mssp.2020.105646
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the present work, we have demonstrated the capacitive coupled non-zero and type-II hysteresis behavior of nickel ferrite (NFO)-titanium oxide (TiO2) nanocomposite. For this, NFO nanoparticles (NPs) and TiO2 NPs were synthesized using hydrothermal and sol-gel method, respectively. The NFO-TiO2 nanocomposite was prepared using a solid-state reaction method and characterized by X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscope, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. The electrical results of the NFO-TiO2 memory device have shown non-zero I-V (unable to cross at origin), cross-over I-V and type-II hysteresis (tangential hysteresis loops) properties and their occurrence was depended upon the magnitude of the electrical stimulus. To further clarify the dominance of the memristive and type-II properties, we have calculated the charge-flux and non-transversal di/dv(t) characteristics of the device based on experimental results. The charge transport mechanisms were investigated and a plausible resistive switching mechanism was reported. Our investigations provide some insights to explain the non-zero and type-II hysteresis behavior of the memristive devices.
引用
收藏
页数：10
相关论文
共 61 条
[41]   Using a low temperature method to fabrication of flexible dye sensitized solar cells with three different counter electrodes [J].
Sabet, Mohammad ;
Jahangiri, Hasan .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (01) :778-783
[42]   Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices [J].
Salaoru, Iulia ;
Li, Qingjiang ;
Khiat, Ali ;
Prodromakis, Themistoklis .
NANOSCALE RESEARCH LETTERS, 2014, 9 :1-7
[43]   Pulse-induced resistive and capacitive switching in TiO2 thin film devices [J].
Salaoru, Iulia ;
Khiat, Ali ;
Li, Qingjiang ;
Berdan, Radu ;
Prodromakis, Themistoklis .
APPLIED PHYSICS LETTERS, 2013, 103 (23)
[44]   The missing memristor found [J].
Strukov, Dmitri B. ;
Snider, Gregory S. ;
Stewart, Duncan R. ;
Williams, R. Stanley .
NATURE, 2008, 453 (7191) :80-83
[45]   Non-zero-crossing current-voltage hysteresis behavior in memristive system [J].
Sun, B. ;
Xiao, M. ;
Zhou, G. ;
Ren, Z. ;
Zhou, Y. N. ;
Wu, Y. A. .
MATERIALS TODAY ADVANCES, 2020, 6
[46]   A Unified Capacitive-Coupled Memristive Model for the Nonpinched Current-Voltage Hysteresis Loop [J].
Sun, Bai ;
Chen, Yuanzheng ;
Xiao, Ming ;
Zhou, Guangdong ;
Ranjan, Shubham ;
Hou, Wentao ;
Zhu, Xiaoli ;
Zhao, Yong ;
Redfern, Simon A. T. ;
Zhou, Y. Norman .
NANO LETTERS, 2019, 19 (09) :6461-6465
[47]   Effect of thermal annealing on physiochemical properties of spray-deposited β-MnO2 thin films for electrochemical supercapacitor [J].
Teli, A. M. ;
Bekanalkar, S. A. ;
Patil, D. S. ;
Pawar, S. A. ;
Dongale, T. D. ;
Shin, J. C. ;
Kim, H. J. ;
Patil, P. S. .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2020, 856
[48]   Effect of annealing temperature on charge storage kinetics of an electrospun deposited manganese oxide supercapacitor [J].
Teli, Aviraj M. ;
Beknalkar, Sonali A. ;
Patil, Dipali S. ;
Pawar, Sachin A. ;
Dubal, Deepak P. ;
Burute, Vishranti Y. ;
Dongale, Tukaram D. ;
Shin, Jae Cheol ;
Patil, Pramod S. .
APPLIED SURFACE SCIENCE, 2020, 511
[49]   Nanobatteries in redox-based resistive switches require extension of memristor theory [J].
Valov, I. ;
Linn, E. ;
Tappertzhofen, S. ;
Schmelzer, S. ;
van den Hurk, J. ;
Lentz, F. ;
Waser, R. .
NATURE COMMUNICATIONS, 2013, 4
[50]   NiCo2O4-decorated porous carbon nanosheets for high-performance supercapacitors [J].
Veeramani, Vediyappan ;
Madhu, Rajesh ;
Chen, Shen-Ming ;
Sivakumar, Mani ;
Hung, Chin-Te ;
Miyamoto, Nobuyoshi ;
Liu, Shang-Bin .
ELECTROCHIMICA ACTA, 2017, 247 :288-295
1234567