Capacitive coupled non-zero I-V and type-II memristive properties of the NiFe2O4-TiO2 nanocomposite

被引：27

作者：

Ahir, Namita A. ^{[1
]}

Takaloo, Ashkan Vakilipour ^{[2
]}

Nirmal, Kiran A. ^{[1
]}

Kundale, Somnath S. ^{[1
]}

Chougale, Mahesh Y. ^{[3
]}

Bae, Jinho ^{[3
]}

Kim, Deok-kee ^{[4
]}

Dongale, Tukaram D. ^{[1
]}

机构：

[1] Shivaji Univ, Sch Nanosci & Biotechnol, Computat Elect & Nanosci Res Lab, Kolhapur 416004, Maharashtra, India

[2] Ulsan Natl Inst Sci & Technol, Sch Energy & Chem Engn, Ulsan 44919, South Korea

[3] Jeju Natl Univ, Dept Ocean Syst Engn, 102 Jejudaehakro, Jeju 63243, South Korea

[4] Sejong Univ, Dept Elect Engn, 209 Neungdong Ro, Seoul 05006, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 125卷 / 125期

基金：

新加坡国家研究基金会;

关键词：

Capacitive coupling; Type-II memristive effect; Non-zero hysteresis; Nanocomposite; Resistive switching; MEMORY; MECHANISM; DEVICE;

D O I：

10.1016/j.mssp.2020.105646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present work, we have demonstrated the capacitive coupled non-zero and type-II hysteresis behavior of nickel ferrite (NFO)-titanium oxide (TiO2) nanocomposite. For this, NFO nanoparticles (NPs) and TiO2 NPs were synthesized using hydrothermal and sol-gel method, respectively. The NFO-TiO2 nanocomposite was prepared using a solid-state reaction method and characterized by X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscope, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. The electrical results of the NFO-TiO2 memory device have shown non-zero I-V (unable to cross at origin), cross-over I-V and type-II hysteresis (tangential hysteresis loops) properties and their occurrence was depended upon the magnitude of the electrical stimulus. To further clarify the dominance of the memristive and type-II properties, we have calculated the charge-flux and non-transversal di/dv(t) characteristics of the device based on experimental results. The charge transport mechanisms were investigated and a plausible resistive switching mechanism was reported. Our investigations provide some insights to explain the non-zero and type-II hysteresis behavior of the memristive devices.

引用

页数：10

共 61 条

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