A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III-V monolithic integration on silicon

被引：1

作者：

Zhou, Ang ^{[1
]}

Wang, Yan Ping ^{[1
]}

Cornet, Charles ^{[1
]}

Leger, Yoan ^{[1
]}

Pedesseau, Laurent ^{[1
]}

Favre-Nicolin, Vincent ^{[2
]}

Chahine, Gilbert Andre ^{[3
]}

Schulli, Tobias Urs ^{[2
]}

Eymery, Joel ^{[4
]}

Bahri, Mounib ^{[5
]}

Largeau, Ludovic ^{[5
]}

Patriarche, Gilles ^{[5
]}

Durand, Olivier ^{[1
]}

Letoublon, Antoine ^{[1
]}

机构：

[1] Univ Rennes, INSA Rennes, Inst FOTON, CNRS,UMR 6082, F-35000 Rennes, France

[2] ESRF, F-38000 Grenoble, France

[3] Univ Grenoble Alpes, CNRS, Grenoble INP, SIMAP, F-38000 Grenoble, France

[4] Univ Grenoble Alpes, CEA, IRIG, MEM,NRS, F-38000 Grenoble, France

[5] Univ Paris Sud, CNRS, UMR 9001, C2N, F-91120 Palaiseau, France

来源：

JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2019年 / 52卷

关键词：

misfit dislocations; GaP; Si pseudo-substrates; X-ray scanning diffraction; photonics; DISLOCATIONS; GAAS; SI; GROWTH; MICROSCOPY; ELECTRON; DEFECTS; EVOLUTION; BEHAVIOR;

D O I：

10.1107/S1600576719008537

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A synchrotron-based scanning X-ray diffraction study on a GaP/Si pseudo-substrate is reported, within the context of the monolithic integration of photonics on silicon. Two-dimensional real-space mappings of local lattice tilt and in-plane strain from the scattering spot distributions are measured on a 200nm partially relaxed GaP layer grown epitaxially on an Si(001) substrate, using an advanced sub-micrometre X-ray diffraction microscopy technique (K-Map). Cross-hatch-like patterns are observed in both the local tilt mappings and the in-plane strain mappings. The origin of the in-plane local strain variation is proposed to be a result of misfit dislocations, according to a comparison between in-plane strain mappings and transmission electron microscopy observations. Finally, the relationship between the in-plane strain and the free surface roughness is also discussed using a statistical method.

引用

页码：809 / 815

页数：7

共 50 条

[41] REAL-TIME STUDY OF STRAIN RELAXATION IN LATTICE-MISMATCHED INGAAS/GAAS BY X-RAY DIFFRACTION
Sasaki, Takuo
Suzuki, Hidetoshi
Sai, Akihisa
Lee, Jong-Han
Takahasi, Masamitu
Fujikawa, Seiji
Arafune, Koji
Kamiya, Itaru
Ohshita, Yoshio
Yamaguchi, Masafumi
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 2017 - +
[42] Two strain-hardening mechanisms in nanocrystalline austenitic steel: An in situ synchrotron X-ray diffraction study
Schloth, P.
Weisser, M. A.
Van Swygenhoven, H.
Van Petegem, S.
Susila, P.
Sarma, V. Subramanya
Murty, B. S.
Lauterbach, S.
Heilmaier, M.
SCRIPTA MATERIALIA, 2012, 66 (09) : 690 - 693
[43] Determining the directional strain shift coefficients for tensile Ge: a combined x-ray diffraction and Raman spectroscopy study
Etzelstorfer, Tanja
Wyss, Andreas
Suess, Martin J.
Schlich, Franziska F.
Geiger, Richard
Frigerio, Jacopo
Stangl, Julian
MEASUREMENT SCIENCE AND TECHNOLOGY, 2017, 28 (02)
[44] Study on thermal expansion of intermetallics in multicomponent Al-Si alloys by high temperature X-ray diffraction
Chen, C. -L.
Thomson, R. C.
INTERMETALLICS, 2010, 18 (09) : 1750 - 1757
[45] Al-Si ordering in albite: A combined single-crystal X-ray diffraction and Raman spectroscopy study
Tribaudino, Mario
Gatta, G. Diego
Aliatis, Irene
Bersani, Danilo
Lottici, Pier Paolo
JOURNAL OF RAMAN SPECTROSCOPY, 2018, 49 (12) : 2028 - 2035
[46] Synchrotron white beam X-ray topography, transmission electron microscopy and high-resolution X-ray diffraction studies of defects and strain relaxation processes in wide band gap semiconductor crystals and thin films
Dudley, M.
Bai, J.
Huang, X.
Vetter, W. M.
Dhanaraj, G.
Raghothamachar, B.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 315 - 322
[47] Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy
Yang, Zhibin
Huang, Wen
Hao, Jianhua
APPLIED PHYSICS LETTERS, 2013, 103 (03)
[48] Interface between Quantum-Size-Effect Pb Nanocrystals and the Si(111)7 x 7 Substrate: an X-Ray Diffraction Study
Gramlich, M. W.
Hayden, S. T.
Jeffrey, C. A.
Kim, C.
Feng, R.
Conrad, E. H.
Miceli, P. F.
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2010, 41A (05): : 1159 - 1161
[49] X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2-xO3 (x=0-2) films on Si (111)
Niu, G.
Zoellner, M. H.
Zaumseil, P.
Pouliopoulos, A.
d'Acapito, F.
Schroeder, T.
Boscherini, F.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (04)
[50] Cation distribution of ZnxCo1-xFe2O4 nanoparticles: A resonant X-ray diffraction study
Nakagomi, F.
de Souza, P. E. N.
Castro, T. J.
Garg, V. K.
Oliveira, A. C.
Silva, F. C. e
Franco, A.
Morais, P. C.
Silva, S. W.
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 842 (842)

← 1 2 3 4 5 →