A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III-V monolithic integration on silicon

被引：1
|
作者：
Zhou, Ang [1 ]
Wang, Yan Ping [1 ]
Cornet, Charles [1 ]
Leger, Yoan [1 ]
Pedesseau, Laurent [1 ]
Favre-Nicolin, Vincent [2 ]
Chahine, Gilbert Andre [3 ]
Schulli, Tobias Urs [2 ]
Eymery, Joel [4 ]
Bahri, Mounib [5 ]
Largeau, Ludovic [5 ]
Patriarche, Gilles [5 ]
Durand, Olivier [1 ]
Letoublon, Antoine [1 ]
机构：
[1] Univ Rennes, INSA Rennes, Inst FOTON, CNRS,UMR 6082, F-35000 Rennes, France
[2] ESRF, F-38000 Grenoble, France
[3] Univ Grenoble Alpes, CNRS, Grenoble INP, SIMAP, F-38000 Grenoble, France
[4] Univ Grenoble Alpes, CEA, IRIG, MEM,NRS, F-38000 Grenoble, France
[5] Univ Paris Sud, CNRS, UMR 9001, C2N, F-91120 Palaiseau, France
来源：
JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2019年 / 52卷
关键词：
misfit dislocations; GaP; Si pseudo-substrates; X-ray scanning diffraction; photonics; DISLOCATIONS; GAAS; SI; GROWTH; MICROSCOPY; ELECTRON; DEFECTS; EVOLUTION; BEHAVIOR;
D O I：
10.1107/S1600576719008537
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A synchrotron-based scanning X-ray diffraction study on a GaP/Si pseudo-substrate is reported, within the context of the monolithic integration of photonics on silicon. Two-dimensional real-space mappings of local lattice tilt and in-plane strain from the scattering spot distributions are measured on a 200nm partially relaxed GaP layer grown epitaxially on an Si(001) substrate, using an advanced sub-micrometre X-ray diffraction microscopy technique (K-Map). Cross-hatch-like patterns are observed in both the local tilt mappings and the in-plane strain mappings. The origin of the in-plane local strain variation is proposed to be a result of misfit dislocations, according to a comparison between in-plane strain mappings and transmission electron microscopy observations. Finally, the relationship between the in-plane strain and the free surface roughness is also discussed using a statistical method.
引用
收藏
页码：809 / 815
页数：7
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