The influence of reaction parameters on the free Si and C contents in the synthesis of nano-sized SiC

被引:43
作者
Larpkiattaworn, S.
Ngernchuklin, P.
Khongwong, W.
Pankurddee, N.
Wada, S.
机构
[1] Thailand Inst Sci & Technol Res, Bangkok 10900, Thailand
[2] Chulalongkorn Univ, Dept Mat Sci, Bangkok, Thailand
关键词
SiC powder; synthesis; Si-C reaction; free Si; reaction parameters;
D O I
10.1016/j.ceramint.2005.06.011
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Uniform nano-sized beta-silicon carbide (beta-SiC) powder was synthesized from the reaction of silicon (Si) and carbon black (C). Mixed Si and C-black powder were pressed into pellets and the influence of four parameters, temperature (1250, 1300 and 1350 degrees C), heating rate (20 and 50 degrees C/min), soaking time (1 and 3 h) and atmosphere (vacuum and argon), were tested. It was found that higher temperatures, higher heating rates and longer soaking times in a vacuum system lead to lower free Si content in the SiC powder created. Temperature was the parameter with the greatest influence on the Si content of the SiC powder. This study also found that the Si-C reaction occurs through gas-solid (SiO-C) and solid-solid (Si-C) reactions that occur simultaneously. (C) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:899 / 904
页数:6
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