Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors

被引：3

作者：

Tassis, D. H.

Hatzopoulos, A. T.

Arpatzanis, N.

Dimitriadis, C. A. ^{[1
]}

Kamarinos, G.

机构：

[1] Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[2] IMEP, ENSERG, F-38016 Grenoble 1, France

来源：

MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 12期

关键词：

D O I：

10.1016/j.microrel.2006.03.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of hot-carriers under dynamic stress on the transfer characteristics and the noise performance of n-channel polysilicon thin-film transistors are analysed. The observed decrease in the on-state current is directly related to the mobility of a damaged region extended over a length of about 0.53 mu m beside the drain, which is evaluated through analysis of the transfer characteristics at low drain voltage. The mobility degradation in the damaged region is due to the formation of traps located near the polysilicon/gate oxide interface as evidenced by the 1/f noise measurements. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：2032 / 2037

页数：6

共 50 条

[21] Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors
Sheng, SR
McAlister, SP
Lee, LS
Hwang, HP
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 34 - 37
[22] Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors
Hastas, NA
Archontas, N
Dimitriadis, CA
Kamarinos, G
Nikolaidis, T
Georgoulas, N
Thanailakis, A
MICROELECTRONICS RELIABILITY, 2005, 45 (02) : 341 - 348
[23] Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors
Sheng, SR
McAlister, SP
Storey, C
Lee, LS
Hwang, HP
SOLID-STATE ELECTRONICS, 2002, 46 (10) : 1603 - 1608
[24] Stability of N-channel polysilicon thin-film transistors with ECR plasma thermal gate oxide
Lee, JY
Han, CH
Kim, CK
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (04) : 169 - 171
[25] TEMPERATURE-DEPENDENCE OF THE CHANNEL HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS
HEREMANS, P
VANDENBOSCH, G
BELLENS, R
GROESENEKEN, G
MAES, HE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (04) : 980 - 993
[26] ON THE CHANNEL-LENGTH DEPENDENCE OF THE HOT-CARRIER DEGRADATION OF N-CHANNEL MOSFETS
BELLENS, R
HEREMANS, P
GROESENEKEN, G
MAES, HE
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) : 553 - 555
[27] AC VERSUS DC HOT-CARRIER DEGRADATION IN N-CHANNEL MOSFETS
MISTRY, KR
DOYLE, B
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 96 - 104
[28] HOT-CARRIER STRESS DAMAGE IN THE GATE OFF STATE IN N-CHANNEL TRANSISTORS
DOYLE, BS
MISTRY, KR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (07) : 1774 - 1776
[29] INFLUENCE OF POSTSTRESS EFFECTS ON THE DYNAMIC HOT-CARRIER DEGRADATION BEHAVIOR OF PASSIVATED N-CHANNEL MOSFET
BELLENS, R
DESCHRIJVER, E
GROESENEKEN, G
HEREMANS, P
MAES, HE
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (07) : 357 - 359
[30] HOT-CARRIER DEGRADATION BEHAVIOR OF N-CHANNEL AND P-CHANNEL MOSFETS UNDER DYNAMIC OPERATION CONDITIONS
BELLENS, R
GROESENEKEN, G
HEREMANS, P
MAES, HE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (08) : 1421 - 1428

← 1 2 3 4 5 →