Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors

被引：3

作者：

Tassis, D. H.

Hatzopoulos, A. T.

Arpatzanis, N.

Dimitriadis, C. A. ^{[1
]}

Kamarinos, G.

机构：

[1] Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[2] IMEP, ENSERG, F-38016 Grenoble 1, France

来源：

MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 12期

关键词：

D O I：

10.1016/j.microrel.2006.03.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of hot-carriers under dynamic stress on the transfer characteristics and the noise performance of n-channel polysilicon thin-film transistors are analysed. The observed decrease in the on-state current is directly related to the mobility of a damaged region extended over a length of about 0.53 mu m beside the drain, which is evaluated through analysis of the transfer characteristics at low drain voltage. The mobility degradation in the damaged region is due to the formation of traps located near the polysilicon/gate oxide interface as evidenced by the 1/f noise measurements. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：2032 / 2037

页数：6

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