Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting

被引：46

作者：

Zhang, Liang ^{[1
,3
]}

Teng, Jing Hua ^{[4
]}

Chua, Soo Jin ^{[1
,3
]}

Fitzgerald, Eugene A. ^{[1
,2
]}

机构：

[1] Singapore MIT Alliance, Adv Mat Micro & Nanosyst Programme, Singapore 117576, Singapore

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[3] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[4] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 26期

关键词：

diffraction gratings; gallium compounds; III-V semiconductors; indium compounds; integrated optics; light emitting diodes; nanotechnology; wide band gap semiconductors; GRATINGS;

D O I：

10.1063/1.3276074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface emitting linearly polarized InGaN/GaN light emitting diode (LED) is demonstrated using a subwavelength metallic nanograting. The aluminum based grating with a period of 150 nm is fabricated on top of the p-contact layer in a conventional InGaN LED structure grown on (0001) oriented sapphire substrate. Polarization ratio can reach 7:1, the highest ever reported polarization ratio directly from a light emitting diode. The polarization characteristics are studied in details both experimentally and theoretically, suggesting an effective way to make polarized light emission devices.

引用

页数：3

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