Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers

被引：63

作者：

Crassous, A. ^{[1
,2
]}

Garcia, V. ^{[1
,2
]}

Bouzehouane, K. ^{[1
,2
]}

Fusil, S. ^{[1
,2
,3
]}

Vlooswijk, A. H. G. ^{[4
]}

Rispens, G. ^{[4
]}

Noheda, B. ^{[4
]}

Bibes, M. ^{[1
,2
]}

Barthelemy, A. ^{[1
]}

机构：

[1] CNRS Thales, Unite Mixte Phys, F-91767 Palaiseau, France

[2] Univ Paris 11, F-91405 Orsay, France

[3] Univ Evry Val dEssonne, F-91025 Evry, France

[4] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期

关键词：

ferroelectric thin films; lead compounds; titanium compounds; tunnelling; PEROVSKITE FILMS; JUNCTIONS; PHYSICS; OXIDES; STATES;

D O I：

10.1063/1.3295700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroelectric tunnel junctions are used to explore the tunneling electroresistance effect-a change in the electrical resistance associated with polarization reversal in the ferroelectric barrier layer-resulting from the interplay between ferroelectricity and quantum-mechanical tunneling. Here, we use piezoresponse force microscopy and conductive-tip atomic force microscopy at room temperature to demonstrate the resistive readout of the polarization state through its influence on the tunnel current in PbTiO3 ultrathin ferroelectric films. The tunnel electroresistance reaches values of 50 000% through a 3.6 nm PbTiO3 film.

引用

页数：3

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