CAPACITIVE PRESSURE SENSOR MODELLING

被引：3

作者：

Magat, Martin ^{[1
]}

Vrba, Radimir ^{[1
]}

Pekarek, Jan ^{[1
]}

Ficek, Richard ^{[1
]}

机构：

[1] Brno Univ Technol, Dept Microelect, Brno, Czech Republic

来源：

2009 SECOND INTERNATIONAL CONFERENCE ON ADVANCES IN CIRCUITS, ELECTRONICS AND MICRO-ELECTRONICS | 2009年

关键词：

elasticity; stress; deformation; electric field; electric capacity;

D O I：

10.1109/CENICS.2009.29

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper deals with an application theory of elasticity in the capacitive pressure sensor. A basis of this paper has been focused to the elastic part of the described model. This model has a second part which is used for solving of electric field and electric capacity. Calculations of deformations of a silicon membrane are modeled as a three dimensional model with distribution corresponding to density gradients. It is segmented according to this elasticity distribution. Simulation consists of simulating elastic-plastic deformation by displacing the internal model points of the used model grid in the direction of the deformations. This model calculates stress forces for controlling that the parameters of simulations are in ranges of elastic deformations which was limited by value of the stress force. In the next step the model solves an electric field model and solves an electrical capacity on the deformed structure.

引用

页码：81 / 85

页数：5

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[2]

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