Optical emission spectroscopy of excited atoms sputtered on a Ti surface under irradiation with multicharged Ar ions

被引：5

作者：

Motohashi, K. ^{[1
]}

Saitoh, Y. ^{[1
]}

Kitazawa, S. ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Phys, 2-24-16 Koganei Shi, Koganei, Tokyo 1848588, Japan

来源：

14TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF HIGHLY CHARGED IONS (HCI 2008) | 2009年 / 163卷

关键词：

HIGHLY-CHARGED IONS; RADIATIVE LIFETIMES;

D O I：

10.1088/1742-6596/163/1/012079

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Optical emission spectroscopy of excited atoms was carried out in order to investigate the sputtering processes on solid surfaces under irradiation of slow, multicharged ions. Many atomic lines of Ti I (neutral) and Ti H (single-charged ions) were observed in wavelengths from 250 to 750 nm with irradiation by Ar3+ (30 keV) on a Ti surface which was placed in a low pressure O-2 atmosphere. The emission intensity of Ti I (520 nm) decreased monotonically with an increase Of O-2 partial pressure, whereas that of Ti I / H (670 run, a 2(nd) order wavelength of 335 run) slightly increased. From a semi-logarithmic plot of emission intensity for the 670 nm spectrum as a function of distance from the surface, the mean velocity of the excited Ti atoms and ions in a normal direction parallel to the surface, or <v(perpendicular to)>, is estimated.

引用

页数：4

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[11] Construction of mini-ECRIS for the JAERI 400 kV ion implanter [J].