Plasmon-enhanced S2 electroluminescence from the high-lying excited state of a single porphyrin molecule

被引:8
作者
Tian, Xiao-Jun [1 ]
Kong, Fan-Fang [1 ]
Yu, Yun-Jie [1 ]
Jing, Shi-Hao [1 ]
Zhang, Xian-Biao [1 ]
Liao, Yuan [1 ]
Zhang, Yao [1 ]
Zhang, Yang [1 ]
Dong, Zhen-Chao [1 ]
机构
[1] Univ Sci & Technol China, Innovat Ctr Quantum Informat & Quantum Phys, Hefei Natl Lab Phys Sci Microscale & Synerget, Hefei 230026, Anhui, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
HOT-ELECTROLUMINESCENCE; ELECTRON-SCATTERING; FLUORESCENCE; EMISSION; ALUMINUM; ACID;
D O I
10.1063/5.0027291
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the B-band electroluminescence from the high-lying S-2 excited state of a single zinc porphyrin molecule with the scanning tunneling microscope-induced luminescence technique by using an aluminum tip. The nanocavity plasmon mode is found to be critical for the occurrence of S-2 electroluminescence. When using a silver tip to excite the molecule electronically decoupled from the Ag(100) substrate by an ultrathin sodium chloride spacer, we only observe the Q-band electroluminescence originating from the radiative decay of the S-1 first excited state, without any B-band emission due to the lack of effective plasmonic enhancement for the B-band. However, when the nanocavity plasmon resonance is tuned to a bluer range by using an aluminum tip, the S-2 electroluminescence from a single zinc porphyrin shows up because the nanocavity plasmon mode can now spectrally overlap with the B-band emission to generate efficient plasmonic enhancement for the radiative decay directly from the S-2 state. Interestingly, the excitation mechanisms for these two types of emission are found to be different. While the Q-band emission is attributed mainly to a carrier-injection mechanism, the B-band electroluminescence is found to be excited via an inelastic electron scattering process. Our results open a route to investigate the photophysical property and dynamic behavior of isolated molecules in their excited states. Published under license by AIP Publishing.
引用
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页数:6
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