Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures

被引：161

作者：

Dong, R. ^{[1
]}

Lee, D. S. ^{[1
]}

Xiang, W. F. ^{[1
]}

Oh, S. J. ^{[1
]}

Seong, D. J. ^{[1
]}

Heo, S. H. ^{[1
]}

Choi, H. J. ^{[1
]}

Kwon, M. J. ^{[1
]}

Seo, S. N. ^{[1
]}

Pyun, M. B. ^{[1
]}

Hasan, M. ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 04期

关键词：

D O I：

10.1063/1.2436720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today's semiconductor technology. In this letter, the reproducible hysteresis and resistive switching characteristics of metal-CuxO-metal (M-CuxO-M) heterostructures driven by low voltages are demonstrated. The fabrication of the M-CuxO-M heterostructures is fully compatible with the standard complementary metal-oxide semiconductor process. The hysteresis and resistive switching behavior are discussed. The good retention characteristics are exhibited in the M-CuxO-M heterostructures by the accurate controlling of the preparation parameters. (c) 2007 American Institute of Physics.

引用

页数：3

共 18 条

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