Band-gap modified Al-doped Zn1-xMgxO transparent conducting films deposited by pulsed laser deposition

被引：124

作者：

Matsubara, K ^{[1
]}

Tampo, H ^{[1
]}

Shibata, H ^{[1
]}

Yamada, A ^{[1
]}

Fons, P ^{[1
]}

Iwata, K ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.1784544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al-doped Zn1-xMgxO films have been deposited on glass substrates at a substrate temperature of 200 degreesC by a pulsed laser deposition system. A resistivity of 3 x 10(-4) Omega cm was obtained at x = 0.06. Film resistivity was found to increase with further increases in Mg composition. The maximum band gap of films with a resistivity rho less than or equal to 1 x 10(-3) Omega cm was found to be 3.97 eV, demonstrating band-gap engineering possibilities in the range of E-g = 3.5-3.97 eV with a resistivity rho less than or equal to 1 x 10(-3) Omega cm. The average transmittance of the films was higher than 90% in the wavelength region lambda = 400-800 nm, a range suitable for transparent conducting film applications. (C) 2004 American Institute of Physics.

引用

页码：1374 / 1376

页数：3

共 13 条

[1] Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J].

Choopun, S ;

Vispute, RD ;

Yang, W ;

Sharma, RP ;

Venkatesan, T ;

Shen, H .

APPLIED PHYSICS LETTERS, 2002, 80 (09) :1529-1531

[2] ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications [J].

Matsubara, K ;

Fons, P ;

Iwata, K ;

Yamada, A ;

Sakurai, K ;

Tampo, H ;

Niki, S .

THIN SOLID FILMS, 2003, 431 :369-372

[3] Room-temperature deposition of Al-doped ZnO films by oxygen radicalassisted pulsed laser deposition [J].

Matsubara, K ;

Fons, P ;

Iwata, K ;

Yamada, A ;

Niki, S .

THIN SOLID FILMS, 2002, 422 (1-2) :176-179

[4] New n-type transparent conducting oxides [J].

Minami, T .

MRS BULLETIN, 2000, 25 (08) :38-44

[5] Preparation of Zn1-xMgxO films by radio frequency magnetron sputtering [J].

Minemoto, T ;

Negami, T ;

Nishiwaki, S ;

Takakura, H ;

Hamakawa, Y .

THIN SOLID FILMS, 2000, 372 (1-2) :173-176

[6] Cu(In,Ga)Se2 solar cells with controlled conduction band offset of window/Cu(In,Ga)Se2 layers [J].

Minemoto, T ;

Hashimoto, Y ;

Satoh, T ;

Negami, T ;

Takakura, H ;

Hamakawa, Y .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (12) :8327-8330

[7]

Narayan J, 2002, SOLID STATE COMMUN, V121, P9, DOI 10.1016/S0038-1098(01)00431-8

[8]

OGATA K, 2002, P INT C MOL BEAM EP, P191

[9] Fabrication of alloys and superlattices based on ZnO towards ultraviolet laser [J].

Ohtomo, A ;

Kawasaki, M ;

Sakurai, Y ;

Ohkubo, I ;

Shiroki, R ;

Yoshida, Y ;

Yasuda, T ;

Segawa, Y ;

Koinuma, H .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 56 (2-3) :263-266

[10] MgxZn1-xO as a II-VI widegap semiconductor alloy [J].

Ohtomo, A ;

Kawasaki, M ;

Koida, T ;

Masubuchi, K ;

Koinuma, H ;

Sakurai, Y ;

Yoshida, Y ;

Yasuda, T ;

Segawa, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2466-2468

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