Coexistence of Bipolar Resistive Switching and the Negative Differential Resistance Effect from a Kesterite Memristor

Multifunctional electronic devices that possess synchronously multiphysical characteristics are in great demand to be widely used in various complex conditions. Herein, for the most promising light-sensitive materials in thin-film solar cells, Cu2ZnSn(S,Se)(4) (CZTSSe) was designed and fabricated for a resistive switching memory device with the structure of AI/CZTSSe/Mo; further, its resistive switching properties were investigated in details. The obtained optimal resistive switching effect with the HRS/LRS resistance ratio of similar to 27.5 indicates that the device possesses good resistance random access performance. Furthermore, the coexistence of resistive switching memory and the negative differential resistance (NDR) state was observed at room temperature and a physical mechanism based on the Schottky barrier reinstallment-induced conductive filaments was proposed to explain this coexistence phenomenon. The study enlightens a new kind of kesterite-based memristor and also synaptic devices with simple operation in future electronic applications.