Observation of Quantum Hall effect in an ultra-thin (Bi0.53Sb0.47)2Te3 film

被引：12

作者：

Zou, Wenqin ^{[1
]}

Wang, Wei ^{[2
]}

Kou, Xufeng ^{[3
]}

Lang, Murong ^{[3
]}

Fan, Yabin ^{[3
]}

Choi, Eun Sang ^{[4
]}

Fedorov, Alexei V. ^{[5
]}

Wang, Kejie ^{[2
]}

He, Liang ^{[2
,3
]}

Xu, Yongbing ^{[2
]}

Wang, Kang. L. ^{[3
]}

机构：

[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Univ, Sch Elect Sci & Engn, York Nanjing Joint Ctr YNJC Spintron & Nano Engn, Nanjing 210093, Jiangsu, Peoples R China

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[4] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[5] Lawrence Berkeley Natl Lab, Adv Light Source Div, 1 Cyclotron Rd, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 21期

关键词：

TOPOLOGICAL INSULATOR; SURFACE-STATES; DIRAC CONE; BI2SE3; TRANSPORT; BI2TE3; PHASE;

D O I：

10.1063/1.4983684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of the Quantum Hall effect from the topological surface states in both the Dirac electron and Dirac hole regions in a 4 quintuple layer (Bi0.53Sb0.47)(2)Te-3 film grown on GaAs (111) B substrates. The Fermi level is sitting within the enlarged bulk band gap due to the quantum confinement of the ultra-thin film and can be tuned through the Dirac point by gate biases. Furthermore, the Hall resistance R-xy shows even denominator plateaus, which could be fractional Quantum Hall states. This may be due to the hybridization between the top and bottom surface states and suggests the possible way to manipulate the interaction of two surfaces for potential spintronic devices. Published by AIP Publishing.

引用

页数：4

共 50 条

[21] Disorder driven variations in magnetoresistance and planar Hall effect in Bi2Te3 thin films
Nepal, Rajeev
Sharma, Vinay
Pogue, Lisa
Drichko, Natalia
Budhani, Ramesh C.
THIN SOLID FILMS, 2022, 761
[22] The investigation of thermal properties on multilayer Sb2Te3/Au thermoelectric material system with ultra-thin Au interlayers
Zhang, Haiming
Ye, Fengjie
Hu, Yangsen
Liu, Jun
Zhang, Yan
Wu, Yigui
Hu, Zhiyu
SUPERLATTICES AND MICROSTRUCTURES, 2016, 89 : 312 - 318
[23] Nonlinear Hall effect in topological insulator Bi2Te3 with hexagonal warping
Yar, Abdullah
Jasra, Kashif
JOURNAL OF APPLIED PHYSICS, 2022, 131 (18)
[24] Pursuing the high-temperature quantum anomalous Hall effect in MnBi2Te4/Sb2Te3 heterostructures
Qi, Shifei
Gao, Ruiling
Chang, Maozhi
Han, Yulei
Qiao, Zhenhua
PHYSICAL REVIEW B, 2020, 101 (01)
[25] Effect of Spinning and Milling Time on Thermoelectric Properties of the p-type (Bi0.25Sb0.75)2Te3 Alloy
Wang Lei
Lu Qing-Mei
Zhang Xin
Zhang Jiu-Xing
JOURNAL OF INORGANIC MATERIALS, 2010, 25 (06) : 588 - 592
[26] Observation of the magneto-transport property in a millimeter-long topological insulator Bi2Te3 thin-film Hall bar device
Pradhan, Sunil Kumar
Barik, Ranjan
APPLIED MATERIALS TODAY, 2017, 7 : 55 - 59
[27] Spin-Orbit Torques and Magnetization Switching in (Bi,Sb)2Te3/Fe3GeTe2 Heterostructures Grown by Molecular Beam Epitaxy
Guillet, Thomas
Galceran, Regina
Sierra, Juan F.
Belarre, Francisco J.
Ballesteros, Belen
Costache, Marius V.
Dosenovic, Djordje
Okuno, Hanako
Marty, Alain
Jamet, Matthieu
Bonell, Frederic
Valenzuela, Sergio O.
NANO LETTERS, 2024, 24 (03) : 822 - 828
[28] Photon drag effect in (Bi1-xSbx)2Te3 three-dimensional topological insulators
Plank, H.
Golub, L. E.
Bauer, S.
Bel'kov, V. V.
Herrmann, T.
Olbrich, P.
Eschbach, M.
Plucinski, L.
Schneider, C. M.
Kampmeier, J.
Lanius, M.
Mussler, G.
Gruetzmacher, D.
Ganichev, S. D.
PHYSICAL REVIEW B, 2016, 93 (12)
[29] Selective area growth of Bi2Te3 and Sb2Te3 topological insulator thin films
Kampmeier, Joern
Weyrich, Christian
Lanius, Martin
Schall, Melissa
Neumann, Elmar
Mussler, Gregor
Schaepers, Thomas
Gruetzmacher, Detlev
JOURNAL OF CRYSTAL GROWTH, 2016, 443 : 38 - 42
[30] Top gating of epitaxial (Bi1-xSbx)2Te3 topological insulator thin films
Yang, Fan
Taskin, A. A.
Sasaki, Satoshi
Segawa, Kouji
Ohno, Yasuhide
Matsumoto, Kazuhiko
Ando, Yoichi
APPLIED PHYSICS LETTERS, 2014, 104 (16)

← 1 2 3 4 5 →