Observation of Quantum Hall effect in an ultra-thin (Bi0.53Sb0.47)2Te3 film

被引：12
|
作者：
Zou, Wenqin [1 ]
Wang, Wei [2 ]
Kou, Xufeng [3 ]
Lang, Murong [3 ]
Fan, Yabin [3 ]
Choi, Eun Sang [4 ]
Fedorov, Alexei V. [5 ]
Wang, Kejie [2 ]
He, Liang [2 ,3 ]
Xu, Yongbing [2 ]
Wang, Kang. L. [3 ]
机构：
[1] Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Sch Elect Sci & Engn, York Nanjing Joint Ctr YNJC Spintron & Nano Engn, Nanjing 210093, Jiangsu, Peoples R China
[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[4] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[5] Lawrence Berkeley Natl Lab, Adv Light Source Div, 1 Cyclotron Rd, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 21期
关键词：
TOPOLOGICAL INSULATOR; SURFACE-STATES; DIRAC CONE; BI2SE3; TRANSPORT; BI2TE3; PHASE;
D O I：
10.1063/1.4983684
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the observation of the Quantum Hall effect from the topological surface states in both the Dirac electron and Dirac hole regions in a 4 quintuple layer (Bi0.53Sb0.47)(2)Te-3 film grown on GaAs (111) B substrates. The Fermi level is sitting within the enlarged bulk band gap due to the quantum confinement of the ultra-thin film and can be tuned through the Dirac point by gate biases. Furthermore, the Hall resistance R-xy shows even denominator plateaus, which could be fractional Quantum Hall states. This may be due to the hybridization between the top and bottom surface states and suggests the possible way to manipulate the interaction of two surfaces for potential spintronic devices. Published by AIP Publishing.
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页数：4
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