Sensitivity and Stability of OSLDs with Filled Deep Electron/hole Traps Under Pre-Irradiation and Bleaching Conditions

被引：0
|
作者：
Kim, J.
Park, S.
Lee, H.
Kim, H.
Choi, C.
Park, J.
机构：
来源：
MEDICAL PHYSICS | 2016年 / 43卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.1118/1.4956503
中图分类号：
R8 [特种医学]; R445 [影像诊断学];
学科分类号：
1002 ; 100207 ; 1009 ;
摘要：
SU-F-T-318
引用
收藏
页码：3536 / 3536
页数：1
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