Modelling interconnects with surface roughness

被引:24
|
作者
Patrikar, RM
Dong, CY
Zhuang, WJ
机构
[1] Inst High Performance Comp, Computat Electromagnet & Elect Div, Singapore 117528, Singapore
[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
关键词
interconnect modelling; parameter extraction; surface roughness; design verification;
D O I
10.1016/S0026-2692(02)00105-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Interconnect modelling is playing crucial role in the integrated circuit design verification since the performance success of design depends on interconnects for today's ICs. For accurate modelling it is more important to take into account all the physical effects with the progresses in technology. One such aspect is roughness on the interconnect surfaces which is arising due to various processes used for fabricating them. In this paper we present model and simulation results for interconnect capacitance, resistance and maximum electric field for interconnects with rough surface. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:929 / 934
页数:6
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