A Monolithic Integrated mHEMT Chipset for High-Resolution Submillimeter-Wave Radar Applications

被引：7

作者：

Tessmann, A. ^{[1
]}

Leuther, A. ^{[1
]}

Massler, H. ^{[1
]}

Lewark, U. ^{[2
]}

Wagner, S. ^{[1
]}

Weber, R. ^{[1
]}

Kuri, M. ^{[1
]}

Zink, M. ^{[1
]}

Riessle, M. ^{[1
]}

Stulz, H. -P. ^{[1
]}

Schlechtweg, M. ^{[1
]}

Ambacher, O. ^{[1
]}

Sommer, R. ^{[3
]}

Wahlen, A. ^{[3
]}

Stanko, S. ^{[3
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

[2] Karlsruhe Inst Technol, IHE, D-76131 Karlsruhe, Germany

[3] Fraunhofer Inst High Frequency Phys & Radar Tech, D-53343 Wachtberg, Germany

来源：

2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS | 2013年

关键词：

frequency multiplier; H-band; heterodyne receiver; high power amplifier (HPA); low-noise amplifier (LNA); medium power amplifier (MPA); metamorphic high electron mobility transistor (mHEMT); submillimeter-wave monolithic integrated circuit (S-MMIC); inverse synthetic aperture radar (ISAR);

D O I：

10.1109/CSICS.2013.6659203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present the development of a millimeter-wave monolithic integrated circuit (MMIC) chipset for use in a high -resolution radar system operating at 300 GHz. The chipset consists of a frequency multiplier by twelve, a medium power amplifier, a high power amplifier and a fully integrated 300 GHz heterodyne receiver MMIC. The frequency multiplier and the two amplifier circuits have been realized using a 100 nm InAlAs/InGaAs based depletion -type metamorphic high electron mobility transistor (mHEMT) technology and achieve a saturated output power of approximately 20 dBm between 90 and 105 GHz. The 300 GHz receiver S-MMIC was fabricated using a more advanced 35 nm mHEMT technology and demonstrates a conversion gain of more than 7 dB between 270 and 325 GHz. All circuits were successfully packaged into millimeter -wave waveguide modules and used to realize a compact 300 GHz radar demonstrator, which delivers an instantaneous bandwidth of 40 GHz together with an outstanding range resolution of 3.7 mm

引用

页数：4

共 7 条

[1] [Anonymous], 2011, IEEE COMPOUND SEMICO
[2] [Anonymous], RECORDS ELECT SYSTEM
[3] [Anonymous], 2011, PROC INT C POWER ENG
[4] THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors
Deal, William
Mei, X. B.
Leong, Kevin M. K. H.
Radisic, Vesna
Sarkozy, S.
Lai, Richard
[J]. IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, 2011, 1 (01) : 25 - 32
[5] Hacker J., 2013, IEEE MTT S INT MICR
[6] Leuther A., 2008, 20 INT C IND PHOSPH
[7] Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar
Tessmann, Axel
Kallfass, Ingmar
Leuther, Arnulf
Massler, Hermann
Kuri, Michael
Riessle, Markus
Zink, Martin
Sommer, Rainer
Wahlen, Alfred
Essen, Helmut
Hurm, Volker
Schlechtweg, Michael
Ambacher, Oliver
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (10) : 2194 - 2205

← 1 →