Modeling of InGaAs/AlGaAsSb Avalanche Photodiodes with High Gain-bandwidth Product

被引：0
|
作者：
Xiao, Yegao [1 ]
Li, Zhiqiang [1 ]
Li, Zhanming S. [1 ]
机构：
[1] Crosslight Software Inc, 230-3410 Lougheed Hwy, Vancouver, BC V5M 2A4, Canada
来源：
2020 IEEE PHOTONICS CONFERENCE (IPC) | 2020年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modeling of high-speed InGaAs/AlGaAsSb separate absorption, grading, charge sheet and multiplication (SAGCM) avalanche photodiodes is presented based on drift-diffusion model and frequency response theory. The simulation results show high ceiling bandwidth with gain-bandwidth product over 400 GHz.
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页数：2
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