Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells

被引：0

作者：

Jia, Huimin ^{[1
]}

Wang, Dengkui ^{[1
]}

Azad, Fahad ^{[2
]}

Tang, Jilong ^{[1
]}

Shen, Lin ^{[1
]}

Hou, Xiaobing ^{[1
]}

Fang, Xuan ^{[1
]}

Fang, Dan ^{[1
]}

Lin, Fengyuan ^{[1
]}

Li, Kexue ^{[1
]}

Su, Shichen ^{[3
,4
]}

Ma, Xiaohui ^{[1
]}

Wei, Zhipeng ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, State Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

[2] Natl Univ Sci & Technol NUST, Sch Nat Sci SNS, H-12, Islamabad 44000, Pakistan

[3] South China Normal Univ, Inst Semicond Sci & Technol, Guangzhou 510631, Peoples R China

[4] South China Normal Univ, Qingyuan Inst Sci & Technol Innovat Co Ltd, Qingyuan 511517, Peoples R China

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2021年 / 15卷 / 06期

基金：

中国国家自然科学基金;

关键词：

InGaAsSb; AlGaAsSb; localized states; photoluminescence; quantum wells; rapid thermal annealing;

D O I：

10.1002/pssr.202000612

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An effect of rapid thermal annealing (RTA) on emission properties of InGaAsSb/AlGaAsSb multiple quantum wells (MQWs) grown by molecular-beam epitaxy is systematically investigated by photoluminescence (PL) spectra. The emission from free-exciton and localized carriers is confirmed in as-grown InGaAsSb/AlGaAsSb MQWs using temperature and excitation power-dependent PL spectra. The results of RTA for different times at a fixed temperature of 350 degrees C are analyzed. The PL intensity of InGaAsSb/AlGaAsSb MQWs is increased after an RTA process, and the peak position is slightly blueshifted at 300 K. Low-temperature PL spectra show improved emission of free-exciton and deteriorated localized carriers recombination at an annealing time of 60 s. Double crystal X-ray diffraction (DCXRD) measurements are also carried out to study the crystalline quality before and after annealing. These results indicate that a suitable RTA treatment is effective in reducing the densities of nonradiative recombination centers, which implies an improved optical property and crystalline quality of quantum well structures. This study provides valuable understanding of recombination processes and improvement of optical properties by RTA treatment in InGaAsSb/AlGaAsSb MQWs.

引用

页数：6

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