Characterization of ALD-deposited Al oxide films for high-k purposes:: A chemical investigation

被引：0

作者：

Alberici, S. G. ^{[1
]}

Giussani, A. ^{[1
]}

机构：

[1] SGMicroelect NV, Phys Lab, FTM Div, I-20041 Milan, Italy

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2006年 / 9卷 / 06期

关键词：

chemical investigation;

D O I：

10.1016/j.mssp.2006.10.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ALD aluminum oxides from H2O and Al(CH3)(3) precursors have been deposited in the pilot line at ST Microelectronics Agrate, as a high-k inter-poly dielectric. The deposition has been followed by some conditioning steps dedicated to the investigation of the chemical film stability. ToF-SIMS, AES and XPS have been used in order to perform this study. ToF-SIMS analyses revealed that, after a N-2 RTP, hydrogen becomes strongly reduced in the film and silicon migrates from the substrate to the surface; moreover an AlN signal is detected across the film as a result of NH3 annealing and/or of N-2 RTP. The chemical affinity of the film towards nitrogen incorporation is proven also by AES and XPS, the latter showing the presence of AlN at the surface in case of N-2 RTP. Finally Si is found at the surface of the RTP treated samples even at the AES and XPS sensitivity. (c) 2006 Published by Elsevier Ltd.

引用

页码：1000 / 1005

页数：6