A novel Ge based overlapping gate dopingless tunnel FET with high performance

被引：12

作者：

Chen, Shupeng ^{[1
]}

Liu, Hongxia ^{[1
]}

Wang, Shulong ^{[1
]}

Han, Tao ^{[1
]}

Li, Wei ^{[2
]}

Wang, Xing ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Wide Band Gap Semicond Mat & Devices Educ, Sch Microelect, Xian 710071, CO, Peoples R China

[2] Northwestern Polytech Univ, Sch Microelect, Xian 710071, CO, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 10期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTOR; DESIGN;

D O I：

10.7567/1347-4065/ab3f00

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, the overlapping gate dopingless tunnel field-effect transistor (OGDL-TFET) is proposed and studied by TCAD simulation. To increase the tunneling efficiency and reduce the manufacture difficulty, a dopingless germanium tunneling junction based on charge plasma concept is induced in OGDL-TFET. A high efficiency line tunneling junction is formed by the gate/backgate overlap. The on-state current of 75.5 mu A mu m(-1) and subthreshold swing of 1.9 mV/dec can be obtained. With cut-off frequency of 16.53 GHz and gain bandwidth product of 2.44 GHz, OGDL-TFET obtains good analog and radio frequency performance. The considerable good performance makes OGDL-TFET very attractive for ultra-low power application. (C) 2019 The Japan Society of Applied Physics

引用

页数：5

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