Comprehensive analysis of the composition determination in epitaxial AlxGa1-xAs films: A multitechnique approach

被引：4
作者：
Gonzalez, M. [1 ,2 ]
Rozas, G. [1 ,2 ]
Salazar Alarcon, L. [1 ,2 ]
Simonetto, M. [1 ,2 ]
Bruchhausen, A. [1 ,2 ]
Zampieri, G. [1 ,2 ]
Baruj, A. [3 ,6 ,7 ]
Prado, F. [4 ,5 ]
Pastoriza, H. [1 ,2 ]
机构：
[1] CNEA CONICET, Inst Nanociencia & Nanotecnol INN, Ave Bustillo 9500,R8402AGP, San Carlos De Bariloche, Argentina
[2] Ctr Atom Bariloche, Inst Balseiro, Ave Bustillo 9500,R8402AGP, San Carlos De Bariloche, Argentina
[3] Comis Nacl Energia Atom, Ctr Atom Bariloche, Ave Bustillo 9500,R8402AGP, San Carlos De Bariloche, Rio Negro, Argentina
[4] Univ Nacl Sur, Dept Fis, Ave LN Alem 1253,B8000CPB, Bahia Blanca, Buenos Aires, Argentina
[5] Consejo Nacl Invest Cient & Tecn, IFISUR, Ave LN Alem 1253,B8000CPB, Bahia Blanca, Buenos Aires, Argentina
[6] Consejo Nacl Invest Cient & Tecn, Buenos Aires, DF, Argentina
[7] Inst Balseiro, San Carlos De Bariloche, Rio Negro, Argentina
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 123卷
关键词：
HIGH-ACCURACY DETERMINATION; X-RAY-DIFFRACTION; RAMAN-SPECTROSCOPY; LATTICE-PARAMETER; ALLOY COMPOSITION; AL CONCENTRATION; DEPENDENCE; GAAS; ALUMINUM; HETEROSTRUCTURES;
D O I：
10.1016/j.mssp.2020.105469
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the determination of aluminum concentration x in epitaxial films of AlxGa1-xAs grown by Molecular Beam Epitaxy (MBE) on GaAs (100) substrates. A large variety of techniques such as quantification of atomic fluxes during MBE growth, high resolution X-ray diffraction (HRXRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), variable angle spectroscopic ellipsometry (VASE), photoluminescence (PL) and Raman spectroscopy (RS) have been used. Our Raman spectroscopy measurements show inconsistencies when analyzed with previously reported models. We also found variability within the same sample indicating that it is strongly influenced by other parameters like strain. We conclude that Raman spectroscopy can not be used as a reliable characterization technique without taking these effects into consideration. The combined analysis of all the other techniques allows us to reduce the uncertainty for the concentration value of each sample and correlate device specific quantities with the growth control parameters.
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页数：11
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