Influence of Si-N complexes on the electronic properties of GaAsN alloys

被引：9

作者：

Jin, Y. ^{[1
,2
]}

He, Y. ^{[3
]}

Cheng, H. ^{[2
]}

Jock, R. M. ^{[1
,2
]}

Dannecker, T. ^{[1
,4
]}

Reason, M. ^{[1
]}

Mintairov, A. M. ^{[3
]}

Kurdak, C. ^{[2
]}

Merz, J. L. ^{[3
]}

Goldman, R. S. ^{[1
,2
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[3] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[4] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 09期

基金：

爱尔兰科学基金会; 美国国家科学基金会;

关键词：

MOLECULAR-BEAM EPITAXY; LUMINESCENCE EFFICIENCY; NITROGEN; ARSENIDES; GA(AS; N); GROWTH; LAYERS;

D O I：

10.1063/1.3198207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the influence of Si-N complexes on the electronic properties of GaAsN alloys. The presence of Si-N complexes is suggested by a decrease in carrier concentration, n, with increasing N-composition, observed in GaAsN: Si films but not in modulation-doped heterostructures. In addition, for GaAsN: Te (GaAsN:Si), n increases substantially (minimally) with annealing-T, suggesting a competition between annealing-induced Si-N complex formation and a reduced concentration of N-related traps. Since Si-N complex formation is enhanced for GaAsN: Si growth with the (2x4) reconstruction, which has limited group V sites for As-N exchange, the (Si-N)(As) interstitial pair is identified as the dominant Si-N complex. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3198207]

引用

页数：3

共 18 条

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