Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering

被引：20

作者：

Valcheva, E. ^{[1
]}

Birch, J. ^{[1
]}

Persson, P. O. A. ^{[1
]}

Tungasmita, S. ^{[1
]}

Hultman, L. ^{[1
]}

机构：

[1] Linkoping Univ, Film Phys Div, Dept Phys, SE-58183 Linkoping, Sweden

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 12期

关键词：

D O I：

10.1063/1.2402971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial domain formation and textured growth in AlN thin films deposited on Si(001) substrates by reactive magnetron sputtering was studied by transmission electron microscopy and x-ray diffraction. The films have a wurtzite type structure with a crystallographic orientation relationship to the silicon substrate of AlN(0001)parallel to Si(001). The AlN film is observed to nucleate randomly on the Si surface and grows three dimensionally, forming columnar domains. The in-plane orientation reveals four domains with their a axes rotated by 15 degrees with respect to each other: AlN < 1120 >parallel to Si[110], AlN < 0110 >parallel to Si[110], AlN < 1120 >parallel to Si[100], and AlN < 0110 >parallel to Si[100] An explanation of the growth mode based on the large lattice mismatch and the topology of the substrate surface is proposed. (c) 2006 American Institute of Physics.

引用

页数：6

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