High-sensitivity silylation process for 193-nm lithography

A high-sensitivity silylation process for 193-nm lithography has been developed by applying chemically amplified resist. A positive high-sensitivity silylation process has been achieved using the chemically amplified negative tone resist for deep UV. Excellent sensitivity (< 5.0 mJ/cm(2)) was obtained with on this process. Comparing this process with the polyvinylphenol (PVP) process having low sensitivity (100 mJ/cm(2)), no disadvantage can be observed. The pattern profile using chemically amplified resist, is equivalent to that using PVP, its resolution is 0.14 mu mL/S. The new process has a depth of focus of 0.6 pm for 0.14 mu mL/S and good linearity to 0.14 mu mL/S using a conventional binary mask. Further, a resolution of 0.10 mu mL/S was obtained with a sensitivity of 5.3 mJ/cm(2) using a Levenson-type mask.