Anisotropic sintering shrinkage and microstructural evolution of c-axis-oriented Si3N4 ceramics

被引:5
作者
Takahashi, Takuma [1 ]
Tatami, Junichi [1 ,2 ]
Nakano, Hiromi [3 ]
Tanaka, Satoshi [4 ]
机构
[1] Kanagawa Inst Ind Sci & Technol, 705-1 Shimoimaizumi, Ebina, Kanagawa 2430435, Japan
[2] Yokohama Natl Univ, Hodogaya Ku, 79-1 Tokiwadai, Yokohama, Kanagawa 2408501, Japan
[3] Toyohashi Univ Technol, 1-1 Hibarigaoka,Tempaku Cho, Toyohashi, Aichi 4418580, Japan
[4] Nagaoka Univ Technol, 1603-1 Kamitomioka Machi, Nagaoka, Niigata 9402188, Japan
关键词
Silicon nitride; Magnetic field orientation; Sintering shrinkage; Thermal conductivity; SILICON-NITRIDE CERAMICS; THERMAL-CONDUCTIVITY; FABRICATION; STRENGTH; RESISTANCE;
D O I
10.2109/jcersj2.19023
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High-thermal-conductivity Si3N4 ceramics are desired for substrates in SiC power devices. We successfully fabricated highly c-axis-oriented Si3N4 ceramic by casting in a rotating-magnetic field and then sintered using a conventional gas pressure. As a result, the c-axis orientation of Si3N4 grains effectively improves the thermal conductivity. The sintering behavior of c-axis-oriented Si3N4 ceramics was investigated. The linear shrinkage ratio in the c-axis-oriented direction was smaller than that in the direction normal to the c-axis-oriented direction. Fine c-axis-oriented structures resulted from the orientation of beta-Si3N4 seeds during the casting because they played as templates controlling the grain growth of beta-Si3N4 nuclei and inducing the anisotropic sintering shrinkage. (C) 2019 The Ceramic Society of Japan. All rights reserved.
引用
收藏
页码:435 / 442
页数:8
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