Bounded analytic bond-order potentials for σ and π bonds

被引:87
作者
Pettifor, DG [1 ]
Oleinik, II [1 ]
机构
[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
关键词
D O I
10.1103/PhysRevLett.84.4124
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Novel analytic bond-order potentials (BOP's) are derived for the sigma and pi bonds of sp-valent systems that are correctly bounded from above by unity. We show that these BOP's allow the concept of single, double, triple, and conjugate bonds in carbon systems to be quantified, the average error compared to accurate tight-binding predictions being only 1% for the sigma bonds and 15% fur the pi bonds. Although molecular dynamics simulations am an order of magnitude slower than with standard Tersoff potentials, these new BOP's provide the first "classical" interatomic potentials that handle both structural differentiation and radical formation naturally within its framework.
引用
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页码:4124 / 4127
页数:4
相关论文
共 20 条
[1]   BOND ORDER POTENTIALS - A STUDY OF S-VALENT AND SP-VALENT SYSTEMS [J].
ALINAGHIAN, P ;
GUMBSCH, P ;
SKINNER, AJ ;
PETTIFOR, DG .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (32) :5795-5810
[2]  
AOKI M, 1993, PHYSICS TRANSITION M, P229
[3]   EMPIRICAL POTENTIAL FOR HYDROCARBONS FOR USE IN SIMULATING THE CHEMICAL VAPOR-DEPOSITION OF DIAMOND FILMS [J].
BRENNER, DW .
PHYSICAL REVIEW B, 1990, 42 (15) :9458-9471
[4]  
Conrad Don, COMMUNICATION
[5]   Thin film deposition: fundamentals and modeling [J].
Gilmer, GH ;
Huang, HC ;
Roland, C .
COMPUTATIONAL MATERIALS SCIENCE, 1998, 12 (04) :354-380
[6]   Friction in the presence of molecular lubricants and solid/hard coatings [J].
Harrison, JA ;
Perry, SS .
MRS BULLETIN, 1998, 23 (06) :27-31
[7]  
Haydock R., 1980, SOLID STATE PHYS, P215
[8]   ORBITAL SYMMETRIZATION OF THE RECURSION METHOD [J].
INOUE, J ;
OHTA, Y .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (13) :1947-1964
[9]   ELECTRONIC CHARGE-DENSITIES AND THE RECURSION METHOD [J].
JONES, R ;
LEWIS, MW .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (01) :95-100
[10]   First-principles determination of the Σ=13 {510} symmetric tilt boundary structure in silicon and germanium [J].
Morris, JR ;
Lu, ZY ;
Ring, DM ;
Xiang, JB ;
Ho, KM ;
Wang, CZ ;
Fu, CL .
PHYSICAL REVIEW B, 1998, 58 (17) :11241-11245