Semiconductor microcavities for spontaneous emission control

被引：5

作者：

Abram, I

机构：

[1] France Telecom/CNET/PAB, Laboratory de Bagneux, F-92225 Bagneux Cedex

来源：

JOURNAL OF LUMINESCENCE | 1997年 / 72-4卷

关键词：

spontaneous emission; semiconductor nanofabrication; cavity quantum electrodynamics;

D O I：

10.1016/S0022-2313(97)00054-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The confinement of the electromagnetic field in cavities with dimensions of the order of the wavelength modifies the characteristics of spontaneous emission of a dipole placed in the cavity. Planar semiconductor microcavities, which confine the field in only one dimension, can be readily fabricated by epitaxial crystal growth techniques. These structures display novel radiative phenomena that are of interest in basic physics and point to the possibility of developing novel optoelectronic devices.

引用

页码：29 / 33

页数：5

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