Recombination and loss analysis in polythiophene based bulk heterojunction photodetectors

被引：927

作者：

Schilinsky, P ^{[1
]}

Waldauf, C

Brabec, CJ

机构：

[1] Univ Oldenburg, Dept Energy & Semicond Res, D-26129 Oldenburg, Germany

[2] Siemens AG, CT MM1, Innovat Polymers, D-91052 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 20期

关键词：

D O I：

10.1063/1.1521244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The monochromatic external quantum efficiency of a bulk heterojunction photodetector based on a blend of poly-3(hexylthiophene) with a methanofullerene is reported to be as high as 76% at the peak maximum at 25degreesC. Analysis of the temperature dependence, the illumination intensity dependence together with absorption measurements in reflection geometry, allow calculation of the internal quantum efficiency of the device close to 100% at the peak maximum. Recombination of photoinduced carriers is negligible or even absent in these photodetectors when operated in the photovoltaic mode. Optical losses in these bulk heterojunction devices are analyzed. (C) 2002 American Institute of Physics.

引用

页码：3885 / 3887

页数：3

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