Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1-x)2O3 for x=0.25-0.74

被引：13
|
作者：
Fares, Chaker [1 ]
Kneiss, Max [2 ]
von Wenckstern, Holger [2 ]
Grundmann, Marius [2 ]
Tadjer, Marko [3 ]
Ren, Fan [1 ]
Lambers, Eric [4 ]
Pearton, S. J. [5 ]
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Leipzig, Felix Bloch Inst Festkorperphys, D-04103 Leipzig, Germany
[3] US Naval Res Lab, Washington, DC 20375 USA
[4] Univ Florida, Nanoscale Res Facil, Gainesville, FL 32611 USA
[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
APL MATERIALS | 2019年 / 7卷 / 07期
关键词：
THIN-FILMS; TRANSPARENT; GROWTH; LAYER; DEPOSITION;
D O I：
10.1063/1.5110498
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The incorporation of In2O3 into Ga2O3 allows for tailoring of the bandgap over a wide range in (InxGa1-x)(2)O-3, and this material is emerging as a candidate in transparent electrodes on optoelectronic devices, heterostructure transistors, photodetectors, and gas sensors. We have measured the band alignments for atomic layer deposited SiO2 and Al2O3 over the composition range x = 0.25-0.74 for (InxGa1-x)(2)O-3 grown by pulsed laser deposition. The valence band offsets from 1.95 to 2.30 eV for SiO2 and 0.88 to 1.23 eV for Al2O3 over this composition range. The bandgaps of (InxGa1-x)(2)O-3 spanned from 4.55 to 4.05 for x = 0.74-0.25. This led to nested band alignments for SiO2 and Al2O3 for the entire composition range of (InxGa1-x)(2)O-3 investigated.
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收藏
页数：7
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