Hysteresis modeling of thin permalloy films and parameter interpretation

被引：10

作者：

Haumer, P ^{[1
]}

Hauser, H ^{[1
]}

Fulmek, PL ^{[1
]}

Bajalan, D ^{[1
]}

机构：

[1] Vienna Tech Univ, Vienna, Austria

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2004年 / 40卷 / 04期

关键词：

anisotropic media; magnetic hysteresis; magnetization; magnetoresistance; permalloy films;

D O I：

10.1109/TMAG.2004.832283

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An energetic model is used to calculate macroscopic magnetization behavior of thin Permalloy films. Therefore it is extended by magnetocrystalline anisotropy energy and domain classes that particularly represent magnetization rotation. Some model parameters can be related to coherent rotation of domain magnetizations. A qualitative agreement is achieved with measurements on sputtered Permalloy films used for anisotropic magnetoresistance (AMR) sensors.

引用

页码：2745 / 2747

页数：3

共 6 条

[1] Cathode sputtered permalloy films of high anisotropic magnetoresistive effect [J].