Adsorption of formaldehyde molecule on the pristine and transition metal doped graphene: First-principles study

被引:75
作者
Chen, Xin [1 ,2 ]
Xu, Lei [1 ,3 ]
Liu, Lin-Lin [1 ,4 ]
Zhao, Lu-Si [1 ,4 ]
Chen, Chun-Ping [1 ,4 ]
Zhang, Yong [5 ]
Wang, Xiao-Chun [1 ,4 ]
机构
[1] Jilin Univ, Inst Atom & Mol Phys, Changchun 130012, Peoples R China
[2] Jilin Univ, Inst Theoret Chem, Changchun 130012, Peoples R China
[3] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China
[4] Jilin Univ, Jilin Prov Key Lab Appl Atom & Mol Spect, Changchun 130012, Peoples R China
[5] Univ North Carolina Charlotte, Dept Elect & Comp Engn, Charlotte, NC 28223 USA
基金
中国国家自然科学基金;
关键词
Metal-doped graphene; Formaldehyde; Density functional theory;
D O I
10.1016/j.apsusc.2016.11.080
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The adsorption of H2CO molecule on pristine and transition metal ( Ti and V) doped graphene samples were investigated via a first-principles approach based on density functional theory. The most stable adsorption geometry, energy and charge transfer of H2CO molecule on pristine and doped graphene are discussed respectively. We have found that Ti and V dopant atoms can significantly enhance the interaction between H2CO molecule and graphene. The calculated net electron transfers, electronic density difference images and densities of states give the evidence that the H2CO molecules stay on Ti ( or V) -doped graphene by chemisorption. After H2CO adsorption, there are significant changes in electronic structure near the Fermi level, for both two systems of Ti and V doped graphene. This indicates distinct changes of electron transport properties. We have also found that H2CO molecule has a larger absorption energy on V-doped graphene ( 1.939 eV) compared with Ti-doped graphene ( 1.120 eV). It is shown that the Ti-doped graphene has enough binding energy, adequate changes in electronic structure and reasonable short recovery time 10(-3) s, making it a promising candidate for detecting formaldehyde gas. (C) 2016 Elsevier B. V. All rights reserved.
引用
收藏
页码:1020 / 1025
页数:6
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