Lithography-free, high-density MoTe2 nanoribbon arrays

被引:10
作者
Deng, Ya [1 ]
Zhu, Chao [2 ]
Wang, Yu [3 ]
Wang, Xiaowei [4 ]
Zhao, Xiaoxu [1 ]
Wu, Yao [1 ]
Tang, Bijun [1 ]
Duan, Ruihuan [1 ]
Zhou, Kun [5 ,6 ]
Liu, Zheng [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Southeast Univ, Collaborat Innovat Ctr Micro Nano Fabricat Device, SEU FEI Nanop Ctr, Key Lab MEMS,Minist Educ, Nanjing 210096, Peoples R China
[3] Nanjing Normal Univ, Jiangsu Collaborat Innovat Ctr Biomed Funct Mat, Sch Chem & Mat Sci, Jiangsu Key Lab New Power Batteries, Nanjing 210023, Peoples R China
[4] Chinese Acad Sci, Suzhou Inst NanoTech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, I Lab, Suzhou 215123, Peoples R China
[5] Nanyang Technol Univ, Environm Proc Modelling Ctr, Nanyang Environm & Water Res Inst, Singapore 637141, Singapore
[6] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore
基金
新加坡国家研究基金会;
关键词
MoTe2; Nanoribbons; Array; Lithography-free; Chemical vapor deposition; VAPOR-DEPOSITION GROWTH; FERROELECTRICITY; GRAPHENE; HYDROGEN;
D O I
10.1016/j.mattod.2022.06.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional (2D) materials have shown a range of extraordinary properties including superconductivity, topological states and ferroelectricity. Among them, 2D arrays with emerging properties have drawn intense interest due to their great potentials in implementing high-density electric devices and advanced integrated circuits. The controllable synthesis of large arrays of 2D elements offers the key advance but remains unsolved. Here we report a one-step chemical vapor deposition (CVD) synthesis strategy for achieving single-crystalline MoTe2 nanoribbon arrays directly on normal SiO2/Si substrate, requiring neither the special stepped substrate nor the post-processing. The lithography-free synthesized ribbons are found to be well-aligned with a density ten times higher than that reported in MoS2. Further scanning transmission electron microscopy (STEM) and first-principles calculation results reveal a crystal-structure boosted solid-liquid-vapor (SLV) self-etching mechanism. Our findings provide a convenient synthesis strategy to achieve high-density nanoarrays that serve as platforms for integrated nanoscale electric devices.
引用
收藏
页码:8 / 17
页数:10
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