Extreme radiation hardness and light-weighted thin-film indium phosphide solar cell and its computer simulation

被引:8
作者
Li, GH [1 ]
Yang, QF
Yan, ZL
Li, WN
Zhang, S
Freeouf, J
Woodall, JM
机构
[1] Shijiazhuang Railway Inst, Appl Phys Res Inst, Shijiazuang 050043, Peoples R China
[2] Interface Studies Inc, Katonah, NY 10536 USA
[3] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
关键词
extreme radiation hardness; InP solar cell; computer simulation; thin film; high power/weight ratio;
D O I
10.1016/S0927-0248(02)00173-3
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A very light-weighted and extreme radiation hardness high-doping n(+)-i-p(+) InP solar cell is developed. The total thickness of its epitaxial layer is only 0.22 mum. It is more radiation hardened than many other structures so that it can provide the required output power for spacecraft even after a decade at 3200 km polar orbits. Its end of life efficiency is about 10% (AM0, I Sun); its highest power/weight ratio is about 130W/g (only the weight of epitaxial layers is considered). The surprising fact is that all of these are obtained from a very simple structure. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:307 / 312
页数:6
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