Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy

被引：204

作者：

Roy, Anupam ^{[1
]}

Movva, Hema C. P. ^{[1
]}

Satpati, Biswarup ^{[2
]}

Kim, Kyounghwan ^{[1
]}

Dey, Rik ^{[1
]}

Rai, Amritesh ^{[1
]}

Pramanik, Tanmoy ^{[1
]}

Guchhait, Samaresh ^{[1
,3
,4
]}

Tutuc, Emanuel ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

[2] Saha Inst Nucl Phys, Surface Phys & Mat Sci Div, 1-AF Bidhannagar, Kolkata 700064, India

[3] Lab Phys Sci, College Pk, MD 20742 USA

[4] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 11期

关键词：

two-dimensional; molybdenum ditelluride; molybdenum diselenide; molecular beam epitaxy; transmission electron microscopy; variable-range hopping; FIELD-EFFECT TRANSISTORS; DIRECT BANDGAP; HIGH-QUALITY; TRANSITION; MOLYBDENUM; TRANSPORT; DEFECTS;

D O I：

10.1021/acsami.6b00961

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states.

引用

页码：7396 / 7402

页数：7

共 41 条

[1] Characterization of MoSe2(0001) and ion-sputtered MoSe2 by XPS [J].

Abdallah, WA ;

Nelson, AE .

JOURNAL OF MATERIALS SCIENCE, 2005, 40 (9-10) :2679-2681

[2] Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials [J].

Bernardi, Marco ;

Palummo, Maurizia ;

Grossman, Jeffrey C. .

NANO LETTERS, 2013, 13 (08) :3664-3670

[3] X-ray photoelectron spectroscopy study of MoTe2 single crystals and thin films [J].

Bernède, JC ;

Amory, C ;

Assmann, L ;

Spiesser, M .

APPLIED SURFACE SCIENCE, 2003, 219 (3-4) :238-248

[4] Environmental Changes in MoTe2 Excitonic Dynamics by Defects-Activated Molecular Interaction [J].

Chen, Bin ;

Sahin, Hasan ;

Suslu, Aslihan ;

Ding, Laura ;

Bertoni, Mariana I. ;

Peeters, F. M. ;

Tongay, Sefaattin .

ACS NANO, 2015, 9 (05) :5326-5332

[5]

Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/NCHEM.1589, 10.1038/nchem.1589]

[6] High Performance Multilayer MoS2 Transistors with Scandium Contacts [J].

Das, Saptarshi ;

Chen, Hong-Yan ;

Penumatcha, Ashish Verma ;

Appenzeller, Joerg .

NANO LETTERS, 2013, 13 (01) :100-105

[7]

Ghatak S, 2011, ACS NANO, V5, P7707, DOI [10.1021/nn202852J, 10.1021/nn202852j]

[8] Electronic transport properties of individual chemically reduced graphene oxide sheets [J].

Gomez-Navarro, Cristina ;

Weitz, R. Thomas ;

Bittner, Alexander M. ;

Scolari, Matteo ;

Mews, Alf ;

Burghard, Marko ;

Kern, Klaus .

NANO LETTERS, 2007, 7 (11) :3499-3503

[9] CRYSTAL STRUCTURE OF MOSE2 [J].

JAMES, PB ;

LAVIK, MT .

ACTA CRYSTALLOGRAPHICA, 1963, 16 (11) :1183-&

[10] Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides [J].

Jariwala, Deep ;

Sangwan, Vinod K. ;

Lauhon, Lincoln J. ;

Marks, Tobin J. ;

Hersam, Mark C. .

ACS NANO, 2014, 8 (02) :1102-1120

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