Softening of the tunneling gap in modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells in magnetic fields

被引：0
作者：
Shin, Y. H. [1 ,2 ]
Park, Y. H. [1 ,2 ]
Perry, C. H. [3 ]
Simmons, J. A. [4 ]
Takamasu, T. [5 ]
Kim, Yongmin [1 ,2 ,5 ]
机构：
[1] Dankook Univ, Dept Appl Phys, Yongin 448701, South Korea
[2] Dankook Univ, Inst Nanosci & Biotechnol, Yongin 448701, South Korea
[3] Northeastern Univ, Dept Phys, Boston, MA 02115 USA
[4] Sandia Natl Labs, Albuquerque, NM 87185 USA
[5] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050003, Japan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 08期
关键词：
aluminium compounds; energy gap; excitons; gallium arsenide; III-V semiconductors; Landau levels; magneto-optical effects; photoluminescence; quantum Hall effect; semiconductor quantum wells; softening; tunnelling; PHOTOLUMINESCENCE; STATES;
D O I：
10.1063/1.3213352
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Magnetophotoluminescence emissions were measured from modulation doped GaAs/AlGaAs asymmetric double quantum wells, wherein a thin barrier (25 A degrees) was sandwiched between a single quantum well (SQW) and a single heterojuction (SHJ). In the SQW, Landau level mixing is observed at the quantum Hall states. At nu < 2, the lowest Landau level transition undergoes an exciton transition. For the SHJ region, the free carrier transitions become excitonic at the crossing point of the GaAs free exciton and the tunneling band gap shows a marked softening. An exciton-exciton interaction is shown to be responsible for the behavior of the subband energy levels in magnetic fields.
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页数：3
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