Porous Silica Antireflective Film at Ultraviolet Laser Wavelength (266 nm)

被引：1

作者：

Shen Bin ^{[1
]}

Xiong Huai ^{[1
]}

Zhang Xu ^{[1
]}

Li Haiyuan ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser & Phys, Shanghai 201800, Peoples R China

来源：

ACTA OPTICA SINICA | 2020年 / 40卷 / 22期

关键词：

materials; sol-gel; anti reflective coating; silica; fourth harmonic generation; RESISTANT; DAMAGE;

D O I：

10.3788/AOS202040.2216001

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Highly dispersed silica (SiO2) sol was prepared in a basic catalyst system using tetraethoxysilane, ethanol, and ammonium hydroxide as the precursor, solvent, and catalyst, respectively. SiO2 antireflective films with fourth harmonic generation antireflection at 266 nm were prepared by dip coating each film in different concentrations of SiO2 sol, and the properties of the as-prepared film were determined. Results show that the fabricated film pulled up at a speed of 4.5 cm . min(-1) from the highest concentration SiO2 sol exhibited the best performance. The film was characterized by a maximum transmittance of 99. 307 % at 266 nm, surface roughness of 1.339 nm, and excellent stability.

引用

页数：7

共 23 条

[1] Experimental research of laser-induced damage mechanism of the sol-gel SiO2 and ibsd SiO2 thin films [J].