Preparation and Characterization of Epitaxial Conductive Nb-SrTiO3 Thin Films on Si Substrates

被引：2
|
作者：
Wang, Chun [1 ]
机构：
[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Ctr Data Storage Syst, Pittsburgh, PA 15213 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 02期
关键词：
Epitaxy; conductive oxide; ferroelectric; thin film; sputter; SRTIO3; HETEROSTRUCTURES; GROWTH; PB(ZR;
D O I：
10.1007/s11664-009-0949-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Epitaxial Nb-doped SrTiO3 (001) thin films have been integrated on Si(001) single-crystal substrates with a TiN template layer by radio-frequency (RF) sputtering. The epitaxial growth of Nb-SrTiO3 was achieved in an Ar environment at a substrate temperature of 540A degrees C. The orientation relationship was determined to be simply cube-on-cube as Nb-SrTiO3 (001)[110]||TiN(001) [110]||Si(001)[110]. The deposited Nb-SrTiO3 films show a smooth and featureless surface with roughness below 1 nm. These smooth Nb-doped SrTiO3/TiN/Si films have a conductivity of 500 S/cm and could be promising electrodes for subsequent ferroelectric thin films.
引用
收藏
页码：187 / 190
页数：4
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