Multiwavelength excitation Raman scattering analysis of bulk and two-dimensional MoS2: vibrational properties of atomically thin MoS2 layers

被引:122
作者
Placidi, Marcel [1 ]
Dimitrievska, Mirjana [1 ]
Izquierdo-Roca, Victor [1 ]
Fontane, Xavier [1 ]
Castellanos-Gomez, Andres [2 ]
Perez-Tomas, Amador [3 ]
Mestres, Narcis [4 ]
Espindola-Rodriguez, Moises [1 ]
Lopez-Marino, Simon [1 ]
Neuschitzer, Markus [1 ]
Bermudez, Veronica [5 ]
Yaremko, Anatoliy [6 ]
Perez-Rodriguez, Alejandro [1 ,7 ]
机构
[1] Catalonia Inst Energy Res IREC, Barcelona 08930, Spain
[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[3] Inst Catala Nanociencia & Nanotecnol, Barcelona 08193, Spain
[4] ICMAB CSIC, Barcelona 08193, Spain
[5] EDF R&D, F-78401 Chatou, France
[6] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine
[7] Univ Barcelona, IN2UB, E-08028 Barcelona, Spain
来源
2D MATERIALS | 2015年 / 2卷 / 03期
关键词
molybdenum disulfide; transition metal dichalcogenides; Raman spectroscopy; Raman resonance; multiwavelength excitation; ultraviolet Raman; atomically thin layers; INTEGRATED-CIRCUITS; MONOLAYER; PHONONS; MODE;
D O I
10.1088/2053-1583/2/3/035006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In order to deepen the knowledge of the vibrational properties of two-dimensional (2D) MoS2 atomic layers, a complete and systematic Raman scattering analysis has been performed using both bulk single-crystal MoS2 samples and atomically thin MoS2 layers. Raman spectra have been measured under non-resonant and resonant conditions using seven different excitation wavelengths from near-infrared (NIR) to ultraviolet (UV). These measurements have allowed us to observe and identify 41 peaks, among which 22 have not been previously experimentally observed for this compound, and characterize the existence of different resonant excitation conditions for the different excitation wavelengths. This has also included the first analysis of resonant Raman spectra that are achieved using UV excitation conditions. In addition, the analysis of atomically thin MoS2 layers has corroborated the higher potential of UV resonant Raman scattering measurements for the non-destructive assessment of 2D MoS2 samples. Analysis of the relative integral intensity of the additional first-and second-order peaks measured under UV resonant excitation conditions is proposed for the non-destructive characterization of the thickness of the layers, complementing previous studies based on the changes of the peak frequencies.
引用
收藏
页数:10
相关论文
共 41 条
[1]   Lattice vibrational modes and phonon thermal conductivity of monolayer MoS2 [J].
Cai, Yongqing ;
Lan, Jinghua ;
Zhang, Gang ;
Zhang, Yong-Wei .
PHYSICAL REVIEW B, 2014, 89 (03)
[2]  
Cardona M., 1982, SPRINGER TOPICS APPL, V50, P19
[3]   Optical identification of atomically thin dichalcogenide crystals [J].
Castellanos-Gomez, A. ;
Agrait, N. ;
Rubio-Bollinger, G. .
APPLIED PHYSICS LETTERS, 2010, 96 (21)
[4]   Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping [J].
Castellanos-Gomez, Andres ;
Buscema, Michele ;
Molenaar, Rianda ;
Singh, Vibhor ;
Janssen, Laurens ;
van der Zant, Herre S. J. ;
Steele, Gary A. .
2D MATERIALS, 2014, 1 (01)
[5]   Layer-dependent resonant Raman scattering of a few layer MoS2 [J].
Chakraborty, Biswanath ;
Matte, H. S. S. Ramakrishna ;
Sood, A. K. ;
Rao, C. N. R. .
JOURNAL OF RAMAN SPECTROSCOPY, 2013, 44 (01) :92-96
[6]   SECOND-ORDER RAMAN-SPECTRUM OF MOS2 [J].
CHEN, JM ;
WANG, CS .
SOLID STATE COMMUNICATIONS, 1974, 14 (09) :857-860
[7]   Graphene based heterostructures [J].
Dean, C. ;
Young, A. F. ;
Wang, L. ;
Meric, I. ;
Lee, G. -H. ;
Watanabe, K. ;
Taniguchi, T. ;
Shepard, K. ;
Kim, P. ;
Hone, J. .
SOLID STATE COMMUNICATIONS, 2012, 152 (15) :1275-1282
[8]   Multiwavelength excitation Raman scattering study of polycrystalline kesterite Cu2ZnSnS4 thin films [J].
Dimitrievska, M. ;
Fairbrother, A. ;
Fontane, X. ;
Jawhari, T. ;
Izquierdo-Roca, V. ;
Saucedo, E. ;
Perez-Rodriguez, A. .
APPLIED PHYSICS LETTERS, 2014, 104 (02)
[9]   Resonance Raman scattering in bulk 2H-MX2 (M = Mo, W; X = S, Se) and monolayer MoS2 [J].
Fan, Jia-He ;
Gao, Po ;
Zhang, An-Min ;
Zhu, Bai-Ren ;
Zeng, Hua-Ling ;
Cui, Xiao-Dong ;
He, Rui ;
Zhang, Qing-Ming .
JOURNAL OF APPLIED PHYSICS, 2014, 115 (05)
[10]   Raman spectrum of graphene and graphene layers [J].
Ferrari, A. C. ;
Meyer, J. C. ;
Scardaci, V. ;
Casiraghi, C. ;
Lazzeri, M. ;
Mauri, F. ;
Piscanec, S. ;
Jiang, D. ;
Novoselov, K. S. ;
Roth, S. ;
Geim, A. K. .
PHYSICAL REVIEW LETTERS, 2006, 97 (18)