Carrier diffusion processes near threading dislocations in GaN and GaN:Si characterized by low voltage cathodoluminescence

被引：7
作者：
Pauc, N. [1 ]
Phillips, M. R. [1 ]
Aimez, V. [1 ]
Drouin, D. [1 ]
机构：
[1] Univ Sherbrooke, Dept Genie Elect & Genie Informat, Sherbrooke, PQ J1K 2R1, Canada
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2006年 / 40卷 / 4-6期
关键词：
low voltage cathodoluminescence; threading dislocation; GaN; diffusion length;
D O I：
10.1016/j.spmi.2006.07.024
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present a low temperature study of GaN epilayers by means of low voltage cathodoluminescence (CL). We show that lowering the primary electrons accelerating voltage down to 1 kV allows imaging of single threading dislocations. By using monochromatic or panchromatic low voltage CL microscopy, it is possible to extract different diffusion lengths related to free excitons, bound excitons or donor-to-acceptor pair transitions. (c) 2006 Elsevier Ltd. All rights reserved.
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页码：557 / 561
页数：5
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