Formation of ZnO Nanoparticles by Atomic Layer Deposition for the Nonvolatile Memory Thin-Film Transistor Applications

被引：0

作者：

Seo, Gi-Ho ^{[1
]}

Yun, Da-Jeong ^{[1
]}

Lee, Won-Ho ^{[1
]}

Kim, So-Jung ^{[1
]}

Yoon, Sung-Min ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, Yongin 17104, Geonggi Do, South Korea

来源：

THIN FILM TRANSISTORS 13 (TFT 13) | 2016年 / 75卷 / 10期

关键词：

D O I：

10.1149/07510.0241ecst

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-temperature atomic-layer-deposition (ALD) process for the formation of ZnO nanoparticles (NPs) was demonstrated, in which the ALD temperature and cycles for diethylzinc precursor were controlled to be 160 degrees C and 20 cycles. The size and areal density of ZnO NPs were confirmed to be approximately 33 nm and 3x10(9) cm(-2), respectively. Nonvolatile memory thin-film transistors were fabricated by employing the ZnO NPs as charge-trap centers for memory operations. The memory window was found to increase from 0.6 to 17.8 V with increasing the ALD cycles from 5 to 20. On- and off-program operations were also confirmed even with voltage pulses as short as 1 mu s.

引用

页码：241 / 245

页数：5

共 50 条

[11] ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor
Lim, S. J.
Kwon, Soonju
Kim, H.
THIN SOLID FILMS, 2008, 516 (07) : 1523 - 1528
[12] Thin-film electronics by atomic layer deposition
Levy, David H.
Nelson, Shelby F.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2012, 30 (01):
[13] Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications
Chen, Shih-Ching
Chang, Ting-Chang
Liu, Po-Tsun
Wu, Yung-Chun
Ko, Chin-Cheng
Yang, Sidney
Feng, Li-Wei
Sze, S. M.
Chang, Chun-Yen
Lien, Chen-Hsin
APPLIED PHYSICS LETTERS, 2007, 91 (21)
[14] Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
Yim, Sung-Soo
Lee, Moon-Sang
Kim, Ki-Su
Kim, Ki-Bum
APPLIED PHYSICS LETTERS, 2006, 89 (09)
[15] Atomic Layer Deposition of Al-Doped ZnO Contacts for ZnO Thin-Film Transistors
Rowlinson, Ben D.
Zeng, Jiale
Akrofi, Joshua D.
Patzig, Christian
Ebert, Martin
Chong, Harold M. H.
IEEE ELECTRON DEVICE LETTERS, 2024, 45 (05) : 837 - 840
[16] Nonvolatile memory properties in ZnO-based thin-film transistors with polymer ferroelectric and thin buffer layer
Park, C. H.
Lee, K. H.
Lee, B. H.
Sung, Myung M.
Im, Seongil
INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2, 2010, : 1185 - +
[17] Transparent ZnO Thin Film Transistor Array by Means of Plasma Enhanced Atomic Layer Deposition
Park, Sang-Hee Ko
Hwang, Chi-Sun
Kwack, Ho-Sang
Lee, Jung Ik
Chu, Hye Yong
IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2006, : 601 - 604
[18] Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
Shen, Mei
Afshar, Amir
Tsui, Ying Yin
Cadien, Kenneth C.
Barlage, Douglas W.
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2017, 16 (01) : 135 - 139
[19] High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition
Wang, Mengfei
Li, Xuefei
Xiong, Xiong
Song, Jian
Gu, Chengru
Zhan, Dan
Hu, Qianlan
Li, Shengman
Wu, Yanqing
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (03) : 419 - 422
[20] Tunable visible response of ZnO thin-film phototransistors with atomic layer deposition technique
Aygun, Levent E.
Bozkurt-Oruc, Feyza
Okyay, Ali K.
2012 IEEE PHOTONICS CONFERENCE (IPC), 2012, : 384 - 385

← 1 2 3 4 5 →