Modeling and analysis for the effects of gamma irradiation on the DC and AC performance in InGaP/GaAs SHBTs

被引：7

作者：

Zhang, Jincan ^{[1
]}

Xu, Kun ^{[1
]}

Wang, Jinchan ^{[1
]}

Liu, Min ^{[1
]}

Zhang, Liwen ^{[1
]}

Liu, Bo ^{[1
]}

Zhao, Qifeng ^{[2
]}

机构：

[1] Henan Univ Sci & Technol, Elect Engn Coll, Luoyang, Peoples R China

[2] Zhongyuan Univ Technol, Sch Elect & Informat, Zhengzhou, Henan, Peoples R China

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2020年 / 175卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

Gamma irradiation; VBIC model; heterojunction bipolar transistor; annealing; PARAMETER EXTRACTION; PROTON; HBT;

D O I：

10.1080/10420150.2019.1684916

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The effects of gamma irradiation on the DC and AC characteristics of InGaP/GaAs single heterojunction bipolar transistors (SHBTs) are investigated comprehensively for the first time, which is based on experimental data before irradiation, after irradiation and after annealing. A simplified VBIC device model is developed to describe the DC and AC characteristics of the devices. The model parameters are extracted from experimental data before irradiation, after irradiation and after annealing. Finally, the degraded rates of model parameters are used to study the radiation-induced degradation of the device performance.

引用

页码：492 / 503

页数：12

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