Analysis of temperature dependence of silicon-on-insulator thermo-optic attenuator

被引：2
|
作者：
Li Yun-Tao [1 ]
Yu Jin-Zhong [1 ]
Chen Yuan-Yuan [1 ]
Sun Fei [1 ]
Chen Shao-Wu [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2007年 / 24卷 / 02期
关键词：
D O I：
10.1088/0256-307X/24/2/045
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3 dB to 1 dB as the temperature increases from 273 K to 343 K.
引用
收藏
页码：465 / 467
页数：3
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