MBE growth and characterization of highly tensile-strained InGaAs/InGaAlAs multi-quantum well for 1.3 μm laser diodes

被引：0

作者：

Kim, J. M. ^{[1
]}

Park, C. Y. ^{[1
]}

Nam, S. Y. ^{[1
]}

Lee, Y. T. ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Informat & Commun, 1 Oryong Dong, Kwangju 500712, South Korea

来源：

2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly tensile-strained InGaAs/InGaAlAs MQW was grown by MBE using the digital-alloy technique. Two peaks corresponding to electron-light hole transition (E1-LH1) and electron-heavy hole transition (E1-HH1) were clearly observed in the PL spectrum of MQW structure.

引用

页码：301 / 303

页数：3

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