MBE growth and characterization of highly tensile-strained InGaAs/InGaAlAs multi-quantum well for 1.3 μm laser diodes

被引：0
|
作者：
Kim, J. M. [1 ]
Park, C. Y. [1 ]
Nam, S. Y. [1 ]
Lee, Y. T. [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Informat & Commun, 1 Oryong Dong, Kwangju 500712, South Korea
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Highly tensile-strained InGaAs/InGaAlAs MQW was grown by MBE using the digital-alloy technique. Two peaks corresponding to electron-light hole transition (E1-LH1) and electron-heavy hole transition (E1-HH1) were clearly observed in the PL spectrum of MQW structure.
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页码：301 / 303
页数：3
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