β-Ga2O3 MOSFETs for Radio Frequency Operation

被引：258

作者：

Green, Andrew Joseph ^{[1
,2
]}

Chabak, Kelson D. ^{[1
]}

Baldini, Michele ^{[3
]}

Moser, Neil ^{[4
]}

Gilbert, Ryan ^{[1
,2
]}

Fitch, Robert C., Jr. ^{[1
]}

Wagner, Guenter ^{[3
]}

Galazka, Zbigniew ^{[3
]}

McCandless, Jonathan ^{[1
,2
]}

Crespo, Antonio ^{[1
]}

Leedy, Kevin ^{[1
]}

Jessen, Gregg H., Sr. ^{[1
]}

机构：

[1] AFRL, Dayton, OH 45433 USA

[2] KBRwyle, Dayton, OH 45433 USA

[3] IKZ, Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[4] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 06期

关键词：

beta-Ga2O3; radio frequency; small-signal; large-signal; gate recess; MOVPE; SI;

D O I：

10.1109/LED.2017.2694805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a beta-Ga2O3 MOSFET with record-high transconductance (g(m)) of 21 mS/mm and extrinsic cutoff frequency (f(T)) and maximum oscillating frequency (f(max)) of 3.3 and 12.9 GHz, respectively, enabled by implementing a new highly doped ohmic cap layer with a sub-micron gate recess process. RF performance was further verified by CW Class-A power measurements with passive source and load tuning at 800 MHz, resulting in P-OUT, power gain, and power-added efficiency of 0.23 W/mm, 5.1 dB, and 6.3%, respectively. These preliminary results indicate potential for monolithic or heterogeneous integration of power switch and RF devices using beta-Ga2O3.

引用

收藏

页码：790 / 793

页数：4

相关论文

共 20 条

[1] Si- and Sn-Doped Homoepitaxial β-Ga2O3 Layers Grown by MOVPE on (010)-Oriented Substrates [J].

Baldini, Michele ;

Albrecht, Martin ;

Fiedler, Andreas ;

Irmscher, Klaus ;

Schewski, Robert ;

Wagner, Guenter .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (02) :Q3040-Q3044

[2] SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD-EFFECT TRANSISTORS [J].

BALIGA, BJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1759-1764

[3] Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage [J].

Chabak, Kelson D. ;

Moser, Neil ;

Green, Andrew J. ;

Walker, Dennis E. ;

Tetlak, Stephen E. ;

Heller, Eric ;

Crespo, Antonio ;

Fitch, Robert ;

McCandless, Jonathan P. ;

Leedy, Kevin ;

Baldini, Michele ;

Wagner, Gunter ;

Galazka, Zbigniew ;

Li, Xiuling ;

Jessen, Gregg .

APPLIED PHYSICS LETTERS, 2016, 109 (21)

[4] On the bulk β-Ga2O3 single crystals grown by the Czochralski method [J].

Galazka, Zbigniew ;

Irmscher, Klaus ;

Uecker, Reinhard ;

Bertram, Rainer ;

Pietsch, Mike ;

Kwasniewski, Albert ;

Naumann, Martin ;

Schulz, Tobias ;

Schewski, Robert ;

Klimm, Detlef ;

Bickermann, Matthias .

JOURNAL OF CRYSTAL GROWTH, 2014, 404 :184-191

[5] 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped β-Ga2O3 MOSFETs [J].

Green, Andrew J. ;

Chabak, Kelson D. ;

Heller, Eric R. ;

Fitch, Robert C., Jr. ;

Baldini, Michele ;

Fiedler, Andreas ;

Irmscher, Klaus ;

Wagner, Guenter ;

Galazka, Zbigniew ;

Tetlak, Stephen E. ;

Crespo, Antonio ;

Leedy, Kevin ;

Jessen, Gregg H. .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (07) :902-905

[6] Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kamimura, Takafumi ;

Wong, Man Hoi ;

Krishnamurthy, Daivasigamani ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2013, 103 (12)

[7] Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates [J].

Higashiwaki, Masataka ;

Sasaki, Kohei ;

Kuramata, Akito ;

Masui, Takekazu ;

Yamakoshi, Shigenobu .

APPLIED PHYSICS LETTERS, 2012, 100 (01)

[8] Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method [J].

Irmscher, K. ;

Galazka, Z. ;

Pietsch, M. ;

Uecker, R. ;

Fornari, R. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)

[9]

JOHNSON EO, 1965, RCA REV, V26, P163

[10] Intrinsic electron mobility limits in β-Ga2O3 [J].

Ma, Nan ;

Tanen, Nicholas ;

Verma, Amit ;

Guo, Zhi ;

Luo, Tengfei ;

Xing, Huili Grace ;

Jena, Debdeep .

APPLIED PHYSICS LETTERS, 2016, 109 (21)