Preparation and characterization of hollandite thin film

被引:1
作者
Fujimoto, K
Suzuki, J
Mori, T
Watanabe, M
机构
[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[2] NIMS, Joint Grad Sch Program, Tokyo, Japan
[3] Tokyo Univ Sci, Joint Grad Sch Program, Tokyo 162, Japan
关键词
hollandite; thin film; sol-gel processing; NO adsorption; FT-IR;
D O I
10.1016/S0167-2738(02)00592-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin films of hollandite-type KxGaxSn8-xO16 (KGSO) were prepared by spin-coating method. Favorite thin films were obtained using YSZ substrate. Those are colorless, transparent and smooth, and about 100-150 nm thick at minimum, consisting of KGSO primary particles with a few tens of nanometers in average size. The adsorption behavior of NO on the thin film was examined by diffuse reflectance infrared Fourier transform spectroscopy (DRIFT). The films were preheated at 968 K in a mixture gas of N-2 and 02 prior to NO adsorption. As the oxygen ratio in the mixture gas increased up to 40%, the absorption bands came to occur and got stronger in the range from 1000 to 1500 cm(-1). Those bands were assigned to NO2 species in chelating and nitrito form, referring to the literature about NO on La2O3. It was found that the coexistence of oxygen remarkably improved the adsorption ability of NO on KGSO thin films. (C) 2002 Elsevier Science B.V. All rights reserved.(C)
引用
收藏
页码:141 / 146
页数:6
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